Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure-Reference-Cited by-同舟云学术

Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure

Author:

Kim Hyoung-Do¹,Naqi Muhammad²,Jang Seong Cheol¹,Park Ji-Min¹,Park Yun Chang³,Park Kyung⁴,Nahm Ho-Hyun⁵^ORCID,Kim Sunkook²^ORCID,Kim Hyun-Suk¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. National Nano Fab Center, Daejeon 34141, Republic of Korea

4. Semiconductor Process Laboratory, WONIK IPS, Gyeonggi-do 17709, Republic of Korea

5. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference44 articles.

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