Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge-Reference-Cited by-同舟云学术

Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge

Published:2021-03-16 Issue:4 Volume:7 Page:2100034
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lehtiö Juha‐Pekka¹^ORCID,Rad Zahra Jahanshah¹,Granroth Sari¹,Yasir Muhammad¹,Punkkinen Marko¹,Punkkinen Risto²,Hedman Hannu‐Pekka²,Rueff Jean‐Pascal³⁴,Rauha Ismo T.S.⁵,Savin Hele⁵,Laukkanen Pekka¹,Kokko Kalevi¹

Affiliation:

1. Department of Physics and Astronomy University of Turku Turku FI‐20014 Finland

2. Department of Computing University of Turku Turku FI‐20014 Finland

3. Synchrotron SOLEIL L'Orme des Merisiers, BP 48 Saint‐Aubin Gif‐sur‐Yvette 91192 France

4. Laboratoire de Chimie Physique‐Matière et Rayonnement Sorbonne Université CNRS Paris 75005 France

5. Department of Electronics and Nanoengineering Aalto University Espoo FI‐02150 Finland

Funder

Academy of Finland

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100034

Reference36 articles.

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3. Ozone-Based Atomic Layer Deposition of Al2 O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

4. Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

5. Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

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