Controlling the fixed negative charge formation in Si/high- k interfaces
Author:
Funder
Academy of Finland
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.6.094604/fulltext
Reference33 articles.
1. High-K materials and metal gates for CMOS applications
2. High dielectric constant oxides
3. Ozone-Based Atomic Layer Deposition of Al2 O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
4. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
5. Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomic-layer-deposited BOx/Al2O3 stack for crystalline silicon surface passivation;Solar Energy Materials and Solar Cells;2023-09
2. Controlling the fixed negative charge formation in Si/high- k interfaces;Physical Review Materials;2022-09-19
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