Ozone-Based Atomic Layer Deposition of Al2 O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation-Reference-Cited by-同舟云学术

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Ozone-Based Atomic Layer Deposition of Al2 O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

Published:2017-03-17 Issue:6 Volume:3 Page:1600491
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Bao Yameng¹,Laitinen Mikko²,Sajavaara Timo²,Savin Hele¹

Affiliation:

1. Department of Micro- and Nanotechnology; Aalto University; Tietotie 3 02150 Espoo Finland

2. Department of Physics; Accelerator Laboratory; University of Jyväskylä; P. O. Box 35 40014 Jyväskylä Finland

Funder

Aalto-Yliopisto

Tekes

Beneq Oy

Okmetic Oyj

Finland-China International R&D Cooperation

Micronova Nanofabrication Centre

Finnish Centre of Excellence in Nuclear and Accelerator Based Physics

Suomen Akatemia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Development of hafnium based high-k materials—A review

2. Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation

3. Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

4. Passivation effects of atomic-layer-deposited aluminum oxide

5. Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

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1. Theoretical Design Strategies for Area-Selective Atomic Layer Deposition;Chemistry of Materials;2024-05-22

2. Controlling the fixed negative charge formation in Si/high- k interfaces;Physical Review Materials;2022-09-19

3. Mechanistic Mapping of Ozone-Dosed Al₂O₃ Atomic Layer Deposition Half-Cycles;Industrial & Engineering Chemistry Research;2022-07-01

4. Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films;The Journal of Physical Chemistry C;2022-04-18

5. Influence of growth temperature on dielectric strength of Al2O3 thin films prepared via atomic layer deposition at low temperature;Scientific Reports;2022-03-24

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