Effect of Annealing Ferroelectric HfO 2 Thin Films: In Situ, High Temperature X‐Ray Diffraction-Reference-Cited by-同舟云学术

Effect of Annealing Ferroelectric HfO 2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

Published:2018-05-16 Issue:7 Volume:4 Page:1800091
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Park Min Hyuk¹^ORCID,Chung Ching‐Chang²,Schenk Tony¹,Richter Claudia¹,Opsomer Karl³,Detavernier Christophe⁴,Adelmann Christoph³,Jones Jacob L.²,Mikolajick Thomas¹⁵,Schroeder Uwe¹

Affiliation:

1. NaMLab gGmbH Noethnitzer Str. 64 ,01187 Dresden Germany

2. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695‐7907 USA

3. IMEC B‐3001 Leuven Belgium

4. Cocoon Solid State Sciences Universiteit Gent B‐9000 Gent Belgium

5. Chair of Nanoelectronic Materials TU Dresden 01062 Dresden Germany

Funder

Army Research Office

Deutsche Forschungsgemeinschaft

North Carolina State University

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800091

Reference73 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

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