Low‐Temperature Atomic Layer Deposition of High‐ k SbO x for Thin Film Transistors-Reference-Cited by-同舟云学术

Low‐Temperature Atomic Layer Deposition of High‐ k SbO _x for Thin Film Transistors

Published:2022-03-04 Issue:7 Volume:8 Page:2101334
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Yang Jun¹²,Bahrami Amin¹,Ding Xingwei³,Zhao Panpan¹²,He Shiyang¹²,Lehmann Sebastian¹,Laitinen Mikko⁴,Julin Jaakko⁴,Kivekäs Mikko⁴,Sajavaara Timo⁴,Nielsch Kornelius¹²^ORCID

Affiliation:

1. Institute for Metallic Materials Leibniz Institute of Solid State and Materials Science 01069 Dresden Germany

2. Institute of Materials Science Technische Universität Dresden 01062 Dresden Germany

3. Key Laboratory of Advanced Display and System Application Ministry of Education, Shanghai University Shanghai 200072 China

4. Department of Physics University of Jyvaskyla Jyväskylä FI‐40014 Finland

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101334

Reference62 articles.

1. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

2. High-Performance and Flexible Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistor With All Copper Alloy Electrodes

3. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

4. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

5. Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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