Time‐Dependent Imprint in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films-Reference-Cited by-同舟云学术

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Time‐Dependent Imprint in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films

Published:2021-06-25 Issue:8 Volume:7 Page:2100151
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Takada Kenshi¹^ORCID,Takarae Shuya¹,Shimamoto Kento¹,Fujimura Norifumi¹,Yoshimura Takeshi¹

Affiliation:

1. Department of Physics and Electronics Graduate School of Engineering Osaka Prefecture University Sakai 599 8531 Japan

Funder

Japan Science and Technology Agency

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100151

Reference40 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

3. Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

4. Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

5. Ferroelectricity in undoped hafnium oxide

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature;Journal of Applied Physics;2024-09-09

2. Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations;IEEE Transactions on Electron Devices;2024-09

3. Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film;Applied Physics Letters;2024-08-12

4. Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors;Advanced Electronic Materials;2024-06-25

5. Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films;Acta Materialia;2024-06

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