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III-Nitride Dilute Magnetic Semiconductors

Published:2019-02-08 Issue: Volume: Page:299-313
ISSN:
Container-title:Molecular Beam Epitaxy
language:
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Author:

Zhou Yi-Kai¹²,Asahi Hajime²

Affiliation:

1. Key Laboratory of Optoelectronic Material and Device; Mathematics & Science College, Shanghai Normal University; Shanghai 200234 China

2. The Institute of Scientific and Industrial Research, Osaka University; 8-1, Mihogaoka Ibaraki 567-0047, Osaka Japan

Publisher

John Wiley & Sons Ltd

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781119354987.ch18/fullpdf

Reference46 articles.

1. Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb

2. Electric-field control of ferromagnetism

3. Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering

4. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

5. Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grain boundary-driven magnetism in aluminum nitride;Applied Physics Letters;2022-12-12

2. Vibrational Spectrum and Thermal Conductivity of Rare‐Earth Semiconducting Erbium Nitride Thin Films;physica status solidi (RRL) – Rapid Research Letters;2022-03-08

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