Vibrational Spectrum and Thermal Conductivity of Rare‐Earth Semiconducting Erbium Nitride Thin Films-Reference-Cited by-同舟云学术

Vibrational Spectrum and Thermal Conductivity of Rare‐Earth Semiconducting Erbium Nitride Thin Films

Published:2022-03-08 Issue:6 Volume:16 Page:2200029
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Upadhya Krithika¹²³,Kumar Rajendra¹²,Li Qinshu⁴,Sun Bo⁴⁵,Saha Bivas¹²³^ORCID

Affiliation:

1. Chemistry and Physics of Materials Unit Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India

2. International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India

3. School of Advanced Materials (SAMat) Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India

4. Tsinghua-Berkeley Shenzhen Institute Tsinghua University Shenzhen 518055 China

5. Guangdong Provincial Key Laboratory of Thermal Management Engineering & Materials Tsinghua Shenzhen International Graduate School Shenzhen 518055 China

Funder

Science and Engineering Research Board

Guangdong Natural Science Foundation

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200029

Reference37 articles.

1. Properties of Rare‐Earth Nitrides

2. Rare-earth mononitrides

3. Electronic, magnetic and transport properties of rare-earth monopnictides

4. Electronic structure of rare-earth nitrides using theLSDA+Uapproach: Importance of allowing4forbitals to break the cubic crystal symmetry

5. Band structure and infrared optical transitions in ErN

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1. Defect-activated versus intrinsic Raman spectra of GdN and LuN;Physical Review B;2023-08-09

2. Coexistence of infrared plasmon and thermoelectricity in rare-earth semiconducting ytterbium nitride;Applied Physics Letters;2023-07-24

3. TO(Γ) mode resonances in the rare-earth nitrides;AIP Advances;2022-07-01