Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications
Author:
Affiliation:
1. S.K.P Engineering College Tiruvannamalai Tamilnadu India
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2609
Reference29 articles.
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2. Proceeding GaN‐based RF power devices and amplifiers;Mishra K;IEEE Proceeding,2008
3. AlGaN/AlN/GaN high‐power microwave HEMT;Shen L;IEEE Electron device Lett,2001
4. Analytical modeling of 2DEG and 2DHG charge balancing in quaternary Al0.42In0.03Ga0.55N/Al0.3In0.7N HEMT;Anbuselvan N;J Comput Electron,2018
5. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer;Balme RS;Phys Status Solidi; C,2003
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