Author:
Li Bo,Yin Yue,Yang Zhichao,Liu Xinke,Li Jingbo
Publisher
Science China Press., Co. Ltd.
Reference65 articles.
1. Sridhar N. Driving the future of HEV/EV with high-voltage solutions. Texas Instruments, 2017, https://www.all-electronics.de/wp-content/uploads/2018/11/slyy052b_EV-HV-solutions.pdf.
2. Miyoshi M, Watanabe A, Egawa T. Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures. Semicond Sci Technol, 2016, 31:
3. Raghavan S, Redwing J M. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers. J Appl Phys, 2005, 98: 23514.
4. Haeberlen M, Zhu D, McAleese C, et al. Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers. J Phys: Conf Ser, 2010, 209: 012017.
5. Fu H, Huang X, Chen H. Effect of buffer layer design on vertical GaN-on-GaN pn and Schottky power diodes. IEEE Electron Device Lett, 2017, 38: 763-766.
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