The Third generation semiconductor materials and devices in the post Moore era: Applications and progress
Author:
Publisher
Science China Press., Co. Ltd.
Subject
Multidisciplinary
Link
https://engine.scichina.com/doi/pdf/88460D85BD7A45808684F6F24FF575CB
Reference5 articles.
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2. Han G Q, Wang Y B, Xu W H, et al. Progress of gallium oxide heterogeneous and heterojunction power transistors (in Chinese). Chin Sci Bull, 2023, 68: 1741–1752 [韩根全, 王轶博, 徐文慧, 等. 氧化镓异质集成和异质结功率晶体管研究进展. 科学通报, 2023, 68: 1741–1752].
3. Deng H X, Wei S H, Li S S. Review of defect physics and doping control in wide-band-gap semiconductors (in Chinese). Chin Sci Bull, 2023, 68: 1753–1761 [邓惠雄, 魏苏淮, 李树深. 宽禁带半导体掺杂机制研究进展. 科学通报, 2023, 68: 1753–1761].
4. Yu J D, Luo Y, Wang L, et al. Low temperature epitaxial technology for GaN-based materials (in Chinese). Chin Sci Bull, 2022, 67: 1762–1776 [余佳东, 罗毅, 汪莱, 等. GaN基材料的低温外延技术. 科学通报, 2022, 67: 1762–1776].
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