Author:
Anbuselvan N.,Amudhalakshmi P.,Mohankumar N.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Godwinraj, D.: Polarization based charge density drain current and small signal model for nano scale AlInGaN/AlN/GaN HEMT device. Superlattices Microstruct. 54, 188–203 (2013)
2. Saremi, M.: Analysis of the reverse I–V characteristics of diamond-based PIN diodes. Appl. Phys. Lett. 111, 043507 (2017)
3. Hahn, H.: Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors. J. Appl. Phys. 117, 104508 (2015)
4. Alahyarizadeh, G.H.: Comparative study of the performance characteristics of green InGaN SQW laser diodes with ternary AlGaN and quaternary AlInGaN electron blocking layer. Dig. J. Nanomater. Biostruct. 7(4), 1869–1880 (2012)
5. Mohanbabu, A.: Modelling of sheet carrier density and microwave frequency characteristics in spacer based AlGaN/AlN/GaN HEMT devices. Solid State Electron. 91, 44–52 (2014)
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