Analytical Noise Characterization of Quaternary AlInGaN High Electron Mobility Transistors
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Published:2019-02-01
Issue:2
Volume:14
Page:247-254
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Anbuselvan N.,Mohankumar N.,Mohanbabu A.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. Spintronic Transport Performances of VSe2 Nanoribbons;Journal of Nanoelectronics and Optoelectronics;2020-02-01