Abstract
Abstract
The emergence of vertical GaN devices solves the problem of insufficient voltage withstand capacity of horizontal GaN devices. However, the current output capability of vertical GaN devices is not comparable to that of lateral GaN devices. So we propose a Al0.3Ga0.7N/GaN current-aperture vertical electron transistor with a SiO2–In0.05Ga0.95N hybrid current-blocking layer (CBL). Through simulation and in-depth study of the proposed device, the results show that the GaN/InGaN secondary channel enhances the saturation output current of the device, achieving a saturated output current (I
DSS) of 985 mA mm−1 and a transconductance (G
m) of 256 mS mm−1, which are 30% and 25% higher than that of the single-channel SiO2 CBL device, respectively. The breakdown voltage is 230 V and the on-resistance (R
on) is only 0.58 mΩ cm2.
Funder
Guangxi Science and Technology Planning Project
Project of Promoting the Basic Ability of Scientific Research of Young and Middle-aged Teachers in Universities of Guangxi
China Postdoctoral Science Foundation
Guangxi Innovation Research Team Project
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology
Yunnan Province major science and technology projects
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials