Multi‐Step Chemical Solution Deposition‐Annealing Process Toward Wake‐Up Free Ferroelectricity in Y:HfO 2 Films-Reference-Cited by-同舟云学术

Multi‐Step Chemical Solution Deposition‐Annealing Process Toward Wake‐Up Free Ferroelectricity in Y:HfO 2 Films

Published:2021-08-28 Issue:18 Volume:8 Page:2100907
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Samanta Shibnath¹^ORCID,Anoop Gopinathan¹^ORCID,Joh HyunJin¹,Seol WooJun¹,Park Seong Min¹,Unithrattil Sanjith¹,Lee Jun Young¹,Kim Tae Yeon¹,Kim Hoon²,Yeom Jiwon²,Hong Seungbum²,Jo Ji Young¹^ORCID

Affiliation:

1. School of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Korea

2. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100907

Reference58 articles.

1. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

2. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

3. Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

4. Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

5. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

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