A High Responsivity and Photosensitivity Self‐Powered UV Photodetector Constructed by the CuZnS/Ga <sub>2</sub> O <sub>3</sub> Heterojunction-Reference-Cited by-同舟云学术

A High Responsivity and Photosensitivity Self‐Powered UV Photodetector Constructed by the CuZnS/Ga ₂ O ₃ Heterojunction

Published:2022-12-04 Issue:5 Volume:10 Page:2202130
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Lv Zunxian¹²,Yan Shiqi³,Mu Wenxiang¹²,Liu Yiyuan¹,Xin Qian¹,Liu Yang¹,Jia Zhitai¹⁴,Tao Xutang¹²^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials Institute of Novel Semiconductors Institute of Crystal Materials Shandong University Jinan Shandong 250100 China

2. Shenzhen Research Institute of Shandong University Shenzhen 518057 China

3. School of Microelectronics Shandong University Jinan Shandong 250100 China

4. Shandong Research Institute of Industrial Technology Jinan 250100 China

Funder

National Natural Science Foundation of China

Shenzhen Fundamental Research Program

Natural Science Foundation of Shandong Province

Higher Education Discipline Innovation Project

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202202130

Reference45 articles.

1. Nanostructured Photodetectors: From Ultraviolet to Terahertz

2. A Self-Powered and Stable All-Perovskite Photodetector-Solar Cell Nanosystem

3. Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures

4. Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

5. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer

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