21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment
Author:
Affiliation:
1. TCL Shenzhen China Star Optoelectronics Technology Co., Ltd Guangdong China
2. TCL Co., Ltd Guangdong China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13863
Reference13 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
3. Design of Highly Reliable Depletion-Mode a-IGZO TFT Gate Driving Circuit for 85-in. 8K4K 120Hz TFT-LCD;Shi L-Q;IDW Symp. Dig.,2017
4. 37-2: 1058-ppi 4K LC Display Using a Top-Gate Self-Aligned CAAC-OS FET
5. 21-2: Highly Reliable Amorphous Indium-Gallium-Zinc-Tin-Oxide TFTs with Back-Channel-Etch Structure
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1. Research progress of high mobility metal oxide semiconductor thin film transistors;CHIN J LIQ CRYST DIS;2024
2. High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach;ACS Applied Materials & Interfaces;2022-10-19
3. 27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays;SID Symposium Digest of Technical Papers;2022-06
4. Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor;Advanced Materials Interfaces;2022-02-27
5. P‐6.6: Effect of SiO 2 /SiN x /Resin Multi‐layer on the TFT Characteristics of BCE‐Type IGZO‐TFT;SID Symposium Digest of Technical Papers;2021-08
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