P‐6.6: Effect of SiO 2 /SiN x /Resin Multi‐layer on the TFT Characteristics of BCE‐Type IGZO‐TFT
Author:
Affiliation:
1. BOE Optoelectronics Technology Co., Ltd Hefei China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15307
Reference11 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Large-Sized and UHD Curved OLED TV Employing White OLEDs and Oxide TFTs;Han Chang-Wook;IDW,2014
3. Advantages of IGZO Platform in Ultra-High-Resolution LCD Applications;Ueda Naoki;IDW,2014
4. Ultra High-definition OLED Display Using C-axis Aligned Crystalline Oxide Semiconductor FETs;Miyake Hiroyuki;IDW,2014
5. 69.2:Distinguished Paper: High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV
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