Author:
Crupi Giovanni,Raffo Antonio,Schreurs Dominique M. M.-P.,Avolio Gustavo,Caddemi Alina,Vannini Giorgio
Funder
FWO-Vlaanderen and KU Leuven GOA-project
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
18 articles.
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1. 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs;IEEE Electron Device Letters;2024-07
2. Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach;IEEE Journal of the Electron Devices Society;2024
3. RF modeling – II;GaN Transistor Modeling for RF and Power Electronics;2024
4. GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks;2023 IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE);2023-10-25
5. GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25