GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition-Reference-Cited by-同舟云学术

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GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition

Published:2023-10-25 Issue: Volume: Page:
ISSN:
Container-title:2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS)
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Author:

Gugliandolo Giovanni¹,Crupi Giovanni²,Marinković Zlatica³,Vadalà Valeria⁴,Raffo Antonio⁵,Donato Nicola¹,Vannini Giorgio⁵

Affiliation:

1. University of Messina,Engineering Department,Messina,Italy,98166

2. University of Messina,BIOMORF Department,Messina,Italy,98125

3. University of Niš,Faculty of Electronic Engineering,Niš,Serbia,18000

4. University of Milano-Bicocca,Department of Physics,Milano,Italy,20126

5. University of Ferrara,Department of Engineering,Ferrara,Italy,44122

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10315951/10315716/10316072.pdf?arnumber=10316072

Reference26 articles.

1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

2. Modeling GaN: Powerful but Challenging

3. An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects

4. GaN Takes the Lead

5. An analysis method for asymmetric resonator transmission applied to superconducting devices

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