4‐3: Invited Paper: High Mobility Oxide Thin‐film Transistors for AMOLED Displays
Author:
Affiliation:
1. R&D Center Samsung Display Inc. Yongin Republic of Korea
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15405
Reference12 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. 5-2: Gate Driver Circuits for Internal Compensation Type OLED Display with High Mobility Oxide TFT
3. Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors
4. High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
5. Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition
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3. Advances in mobility enhancement of ITZO thin-film transistors: a review;Journal of Semiconductors;2023-09-01
4. 43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO;SID Symposium Digest of Technical Papers;2023-06
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