Significant Improvement of Switching Characteristics in a 1. <scp> 2‐kV <i>SiC</i> SWITCH‐MOS </scp> by the Application of Kelvin Source Connection-Reference-Cited by-同舟云学术

Significant Improvement of Switching Characteristics in a 1. 2‐kV SiC SWITCH‐MOS by the Application of Kelvin Source Connection

Published:2022-10-17 Issue:2 Volume:18 Page:278-285
ISSN:1931-4973
Container-title:IEEJ Transactions on Electrical and Electronic Engineering
language:en
Short-container-title:IEEJ Transactions Elec Engng

Author:

Matsui Kevin¹,Tawara Takeshi²,Harada Shinsuke²,Tanaka So²,Sato Hiroshi²,Yano Hiroshi¹,Iwamuro Noriyuki¹

Affiliation:

1. Graduate School of Pure and Applied Sciences University of Tsukuba 1‐1‐1, Tennoudai Tsukuba Ibaraki 305‐8573 Japan

2. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology 16‐1, Onogawa Tsukuba Ibaraki 305‐8569 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/tee.23727

Reference24 articles.

1. Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

2. Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme

3. JiangH WeiJ DaiX KeM ZhengC DevinyI.Silicon carbide split‐gate MOSFET with merged Schottky barrier diode and reduced switching loss.Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD);2016 59–63.

4. KawaharaK HinoS SadamatsuK NakaoY YamashiroY YamamotoY IwamatsuT NakataS TomohisaS YamakawaS.6.5 kV Schottky‐barrier‐diode‐embedded SiC‐MOSFET for compact full‐unipolar module.Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD);2017 41–44.

5. Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode

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1. A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD);Crystals;2023-04-10

2. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023

3. A Novel 4h-Sic Sbd-Wall-Integrated Trench Mosfet with Improved Performance;2023