Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.200903225/fullpdf
Reference6 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator
3. Amorphous oxide channel TFTs
4. Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects
5. Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors
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1. A Review on Progress, Challenges, and Prospects of Material Jetting of Copper and Tungsten;Nanomaterials;2023-08-10
2. Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes;IEEE Electron Device Letters;2021-06
3. Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier;Journal of Alloys and Compounds;2021-04
4. Amorphous Indium-Gallium-Zinc-Oxide TFTs Patterned by Self-Aligned Photolithography Overcoming the GHz Threshold;IEEE Electron Device Letters;2020-12
5. Contact Performance and Thermal Stability Improvement of Amorphous InGaZnO Thin-Film Transistors by Using a Buffer/Cu/Buffer Source/Drain Electrode Structure;IOP Conference Series: Materials Science and Engineering;2020-03-01
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