Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors-Reference-Cited by-同舟云学术

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

Published:2008-08 Issue:8 Volume:29 Page:879-881
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Park Jaechul,Kim Changjung,Kim Sunil,Song Ihun,Kim Sangwook,Kang Donghun,Lim Hyuck,Yin Huaxiang,Jung Ranju,Lee Eunha,Lee Jaecheol,Kwon Kee-Won,Park Youngsoo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4571121/04571138.pdf?arnumber=4571138

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