30.2: Invited Paper: Universal Description of FET Mobility of TFTs in Terms of Debye Length, Accumulation Layer Thickness and Film Thickness

Abstract

A material agnostic modeling framework is presented for predicting film thickness and Debye length scaling of electrical performance in TFTs. Material parameters for a‐IGZO are used to demonstrate the predictive capability of the model, which is applied to identify theoretical maxima of field effect mobility within a large parameter space of Debye length and film thickness. Since FET mobility is a key performance metric in contemporary a‐IGZO TFTs for AMOLED applications, the utility of this approach is timely in its ability to provide clearer direction to optimize performance within a highly sensitive parameter space.