Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. IRE-IEEE Solid State Devices Research Conference;Kahng,1960
2. A RESONANT‐GATE SILICON SURFACE TRANSISTOR WITH HIGH‐QBAND‐PASS PROPERTIES
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