A RESONANT‐GATE SILICON SURFACE TRANSISTOR WITH HIGH‐QBAND‐PASS PROPERTIES
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754323
Reference2 articles.
1. Tuned integrated circuits—A state-of-the-art survey
2. The silicon insulated-gate field-effect transistor
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