Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects-Reference-Cited by-同舟云学术

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Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects

Published:1998-11-15 Issue:Part 1, No. 11 Volume:37 Page:5914-5920
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiang Chun-sung,Martin Sandrine,Kanicki Jerzy,Ugai Yasuhiro,Yukawa Teizo,Takeuchi Shu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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