Impact of Electron Irradiation on N‐ and O‐Enriched FZ Silicon <i>p</i> ‐in‐ <i>n</i> Pad Radiation Detectors-Reference-Cited by-同舟云学术

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Impact of Electron Irradiation on N‐ and O‐Enriched FZ Silicon p ‐in‐ n Pad Radiation Detectors

Published:2017-10-19 Issue:11 Volume:14 Page:1700019
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:physica status solidi c

Author:

Lauer Kevin¹,Xu Xumei¹,Karolewski Dominik¹,Gohs Uwe²,Kwestarz Michael³,Kaminski Pawel⁴,Täschner Robert¹,Klein Thomas¹,Wittig Tobias¹,Röder Ralf¹,Ortlepp Thomas¹

Affiliation:

1. CiS Forschungsinstitut für Mikrosensorik GmbHKonrad‐Zuse‐Str. 1499099ErfurtGermany

2. Leibniz‐Institut für Polymerforschung Dresden e. V.Hohe Straße 601069DresdenGermany

3. Topsil Semiconductors sp. z o. o.ul. Wólczyńska 13301‐919WarszawaPoland

4. Institute of Electronic Materials Technologyul. Wólczyńska 13301‐919WarszawaPoland

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700019

Reference26 articles.

1. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

2. Close to midgap trapping level in 60Co gamma irradiated silicon detectors

3. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

4. Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

5. The impact of nitrogen on the defect aggregation in silicon

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