Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy-Reference-Cited by-同舟云学术

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Author:

Radu R.¹,Pintilie I.¹^ORCID,Nistor L. C.¹^ORCID,Fretwurst E.²,Lindstroem G.²,Makarenko L. F.³

Affiliation:

1. National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125, Romania

2. Institute for Experimental Physics, University of Hamburg, D-22761 Hamburg, Germany

3. Belarusian State University, Independence Ave. 4, 220030 Minsk, Belarus

Funder

CERN-RD50 Collaboration

Romanian Authority for Scientific Research

German Academic Exchange Service (Deutsche Akademische Austauschdienst Dienst)

Seventh Framework Programme (European Union Seventh Framework Programme)

Alexander von Humboldt-Stiftung (Alexander von Humboldt Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference61 articles.

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

3. Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-04