Silicon detectors for the SLHC—An overview of recent RD50 results
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. M. Huhtinen, in: SLHC Electronics Workshop, CERN, 2004.
2. Simulation of non-ionising energy loss and defect formation in silicon
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
5. Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes
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