Growth of GaN and AlGaN on (100) β-Ga2O3 substrates-Reference-Cited by-同舟云学术

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Growth of GaN and AlGaN on (100) β-Ga2O3 substrates

Published:2012-01-26 Issue:3-4 Volume:9 Page:519-522
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Ito Shun,Takeda Kenichiro,Nagata Kengo,Aoshima Hiroki,Takehara Kosuke,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Electrostatic Engineering of β-Ga₂O₃ Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack;IEEE Transactions on Electron Devices;2022-10

4. Analysis of DC and RF performance of Al _0. ₃₁ Ga ₀ _. ₆₉ N /Al _0. ₁ Ga ₀ _. ₉ N / β‐Ga ₂ O ₃ double quantum well HEMT on silicon carbide substrate;International Journal of RF and Microwave Computer-Aided Engineering;2022-03-12

5. Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics;Electronics;2022-01-12

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