Analysis of <scp>DC</scp> and <scp>RF</scp> performance of Al 0. <scp> 31 Ga 0 </scp> . <scp> 69 N </scp> /Al 0. <scp> 1 Ga 0 </scp> . <scp> 9 N </scp> / <scp> β‐Ga 2 O 3 </scp> double quantum well <scp>HEMT</scp> on silicon carbide substrate-Reference-Cited by-同舟云学术

Analysis of DC and RF performance of Al _0. ₃₁ Ga ₀ _. ₆₉ N /Al _0. ₁ Ga ₀ _. ₉ N / β‐Ga ₂ O ₃ double quantum well HEMT on silicon carbide substrate

Published:2022-03-12 Issue:6 Volume:32 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Chinnaswamy Sivamani¹,Manickam Rajeswari²,Vincent Vijikala³,Thankaraj Sujatha⁴

Affiliation:

1. Department of Biomedical Engineering KIT ‐ KalaignarKarunanidhi Institute of Technology Coimbatore India

2. Department of Computer Science and Engineering Karunya Institute of Technology and Sciences Coimbatore India

3. Department of Electrical and Electronics Engineering Sahrdaya College of Engineering & Technology Kerala India

4. Department of Artificial Intelligence and Data Science Sri Krishna College of Engineering and Technology Coimbatore India

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.23141

Reference35 articles.

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2. Efficiency characterization and thermal study of GaN based 1 kW inverter;Han D;Twenty‐Sixth Ann IEEE Appl Power Electron Conf Exposition (APEC),2014

3. 600 V normally‐off p‐gate GaN HEMT based 3‐level inverter;Gurpinar E;IEEE 3rd Int Future Energy Electron Conf ECCE Asia (IFEEC),2017

4. A 1‐MHz GaN converter with 4X voltage range;He M;IEEE Appl Power Electron Conf Exposition (APEC),2019

5. 75 MHz discrete GaN based multi‐level buck converter for envelope tracking applications;Villarruel‐Parra A;IEEE Appl Power Electron Conf Exposition (APEC),2019

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