Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
Reference51 articles.
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1. Investigate AlN/GaN HEMT performance for future RF and high voltage switching applications;2024 International Conference on Advances in Modern Age Technologies for Health and Engineering Science (AMATHE);2024-05-16
2. Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications;Micro and Nanostructures;2024-05
3. Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics;Journal of Electronic Materials;2024-03-20
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