Ge content dependence of radiation damage in Si1-xGexsource/drain p-type metal oxide semiconductor field effect transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Ge content dependence of radiation damage in Si1-xGexsource/drain p-type metal oxide semiconductor field effect transistors

Published:2013-05-06 Issue:7-8 Volume:10 Page:1148-1151
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Nakashima Toshiyuki,Yoneoka Masashi,Tsunoda Isao,Takakura Kenichiro,Gonzalez Mireia Bargallo,Simoen Eddy,Claeys Cor,Yoshino Kenji

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel layout technique for single-event transient mitigation by the groove structure;Radiation Effects and Defects in Solids;2024-07-10

2. Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET;IETE Journal of Research;2021-01-18

3. Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET;Radiation Effects and Defects in Solids;2019-09-29

4. Total Dose Radiation Response of Capacitance Characteristic for Nano-scale NMOS;IETE Journal of Research;2019-01-15

5. Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET;Microelectronics Reliability;2017-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP