Total Dose Radiation Response of Capacitance Characteristic for Nano-scale NMOS-Reference-Cited by-同舟云学术

Total Dose Radiation Response of Capacitance Characteristic for Nano-scale NMOS

Published:2019-01-15 Issue:4 Volume:67 Page:532-537
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Liao Chenguang¹,Yang Yintang¹,Zhu Zhangming¹,Hao Minru¹

Affiliation:

1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2018.1562385

Reference24 articles.

1. Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

2. Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

3. Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor

4. Modeling of the effect of uniaxial mechanical strain on drain current and threshold voltage of an n-type MOSFET

5. J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, J. A. Felix, P. E. Dodd, P. Paillet, and V. Ferlet-Cavrois, “Radiation effects in MOS oxides,” IEEE Trans. Nuclear Science, Vol. 55, no. 4, pp. 1833–53, Aug. 2008.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel layout technique for single-event transient mitigation by the groove structure;Radiation Effects and Defects in Solids;2024-07-10

2. Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies;Australian Journal of Electrical and Electronics Engineering;2019-06-10