Novel layout technique for single-event transient mitigation by the groove structure
Author:
Affiliation:
1. Ministry of Key Laboratory on Photoelectric Oil-Gas Logging and Detecting, School of Science, Xi’an Shiyou University, Xi’an, People’s Republic of China
Funder
National Natural Science Foundation of China
Scientific Research Program Funded by Shaanxi Provincial Education Department
Xi’an Shiyou University
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420150.2024.2352882
Reference20 articles.
1. Hot carrier reliability assessment of vacuum gate dielectric trench MOSFET (TG-VacuFET)
2. Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET
3. Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
4. Synthesis of silicone blocked bio-polyurethane and its application in highly stretchable fiber-shaped strain sensor
5. 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys
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