Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS-Reference-Cited by-同舟云学术

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Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS

Published:2022-07-17 Issue:33 Volume:18 Page:2202590
ISSN:1613-6810
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language:en
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Author:

Pendurthi Rahul¹,Jayachandran Darsith¹,Kozhakhmetov Azimkhan²,Trainor Nicholas²³,Robinson Joshua A.²³,Redwing Joan M.²³,Das Saptarshi¹²³⁴^ORCID

Affiliation:

1. Engineering Science and Mechanics Penn State University University Park PA 16802 USA

2. Materials Science and Engineering Penn State University University Park PA 16802 USA

3. 2D Crystal Consortium ‐ Materials Innovation Platform (2DCC‐MIP) Materials Research Institute Penn State University University Park PA 16802 USA

4. Electrical Engineering and Computer Science Penn State University University Park PA 16802 USA

Funder

Army Research Office

National Science Foundation

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202202590

Reference61 articles.

1. Cramming More Components Onto Integrated Circuits

2. The era of hyper-scaling in electronics

3. Scaling Challenges for Advanced CMOS Devices

4. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

5. Memory devices and applications for in-memory computing

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