Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices-Reference-Cited by-同舟云学术

Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices

Published:2022-06-19 Issue:28 Volume:18 Page:2200882
ISSN:1613-6810
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language:en
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Author:

Shin Yongjun¹^ORCID,Kwon Junyoung²,Jeong Yeonsu³,Watanabe Kenji⁴,Taniguchi Takashi⁵,Im Seongil³,Lee Gwan‐Hyoung¹⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering Seoul National University Gwanak‐ro 1, Gwanak‐gu Seoul 08826 Republic of Korea

2. Department of Materials Science and Engineering Yonsei University Yonsei‐ro 50, Seodaemun‐gu Seoul 03722 Republic of Korea

3. Van der Waals Materials Research Center Department of Physics Yonsei University Yonsei‐ro 50, Seodaemun‐gu Seoul 03722 Republic of Korea

4. Research Center for Functional Materials National Institute for Materials Science Ibaraki 305‐0044 Japan

5. International Center for Materials Nanoarchitectonics National Institute for Materials Science Ibaraki 305‐0044 Japan

6. Research Institute of Advanced Materials (RIAM) Institute of Engineering Research Institute of Applied Physics Seoul National University Gwanak‐ro 1, Gwanak‐gu Seoul 08826 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202200882

Reference27 articles.

1. Single-layer MoS2 transistors

2. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

3. Large scale MoS 2 nanosheet logic circuits integrated by photolithography on glass

4. 2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

5. Van der Waals heterostructures

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