Facilitated fluorination and etching of 2D materials

Author:

Shin YongjunORCID,Shin Subin,Sung Dongchul,Cha JanghwanORCID,Choi Hyeong-Kyu,Jeong YunjoORCID,Ji Im Min,Hui Kim Yang,Ahn Seokhoon,Bae SukangORCID,Lim JoonwonORCID,Han Edmund,Huang Pinshane Y.,van der Zande Arend M.,Hong SuklyunORCID,Lee Gwan-Hyoung,Son JangyupORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. The etching of silicon with XeF2 vapor;Winters;Appl. Phys. Lett.,2008

2. I.W.T. Chan, K.B. Brown, R.P.W. Lawson, A.M. Robinson, M. Yuan, D. Strembicke, Gas phase pulse etching of silicon for MEMS with xenon difluoride, in: Engineering Solutions for the Next Millennium, 1999 IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.99TH8411), 1999, pp. 1637-1642, vol.1633.

3. Isotropic etching of silicon in fluorine gas for MEMS micromachining;Arana;J. Micromech. Microeng.,2007

4. Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures;Son;Nat. Commun.,2018

5. Tailoring surface properties via functionalized hydrofluorinated graphene compounds;Son;Adv. Mater.,2019

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