X-band MMIC low-noise amplifier MMIC on SiC substrate using 0.25-μm ALGaN/GaN HEMT technology-Reference-Cited by-同舟云学术

X-band MMIC low-noise amplifier MMIC on SiC substrate using 0.25-μm ALGaN/GaN HEMT technology

Published:2013-11-25 Issue:1 Volume:56 Page:96-99
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Chang Woojin¹,Jeon Gye-Ik¹,Park Young-Rak¹,Mun Jae-Kyoung¹

Affiliation:

1. GaN Power Electronics Research Section, Components and Materials Research Laboratory; Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-Dong; Yuseong-Gu Daejeon Korea

Funder

“Energy Efficient Power Semiconductor Technology for Next Generation Data Center” IT R&D

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.28044/fullpdf

Reference9 articles.

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3. A. Bettidi F. Corsaro A. Cetronio A. Nanni M. Peroni P. Romanini X-band GaN-HEMT LNA performance versus robustness trade-off 2009 1792 1795

4. Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier;Seo;Electron Lett,2005

5. J.P.B. Janssen M. van Heijningen G.C. Visser M. Rodenburg H.K. Johnson M.J. Uren E. Morvan F.E. van Vliet Robust X-band LNAs in AlGaN/GaN technology Rome, Italy, 2009 101 104

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