GaN-based Single Stage Low Noise Amplifier for X-band Applications-Reference-Cited by-同舟云学术

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GaN-based Single Stage Low Noise Amplifier for X-band Applications

Published:2022-05-09 Issue: Volume: Page:
ISSN:
Container-title:2022 Microwave Mediterranean Symposium (MMS)
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Author:

Caglar Gizem Tendurus¹,Aras Yunus Erdem²,Urfali Emirhan¹,Yilmaz Dogan¹,Ozbay Ekmel²,Nazlibilek Sedat³

Affiliation:

1. Nanotechnology Research Center (NANOTAM),Ankara,Turkey

2. Bilkent University,Nanotechnology Research Center (NANOTAM),Department of Electrical and Electronics Engineering,Ankara,Turkey

3. Bilkent University,Department of Electrical and Electronics Engineering,Ankara,Turkey

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9823395/9825496/09825558.pdf?arnumber=9825558

Reference11 articles.

1. Analysis and design of multi-stage wideband LNA using simultaneously noise and impedance matching method

2. GaN-Based Robust Low-Noise Amplifiers

3. An X-Band Robust GaN Low-Noise Amplifier MMIC with Sub 2 dB Noise Figure;kazan;2018 48th European Microwave Conference (EuMC),0

4. X-band MMIC low-noise amplifier MMIC on SiC substrate using 0.25-μm ALGaN/GaN HEMT technology

5. GaN based LNA MMICs for X-Band Applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications;International Journal of Circuit Theory and Applications;2024-01-27

2. Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-30

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