Highly robust X‐band quasi circulator‐integrated low‐noise amplifier for high survivability of radio frequency front‐end systems
Author:
Affiliation:
1. Department of E & C Engineering National Institute of Technology Karnataka, Surathkal Mangalore India
2. Department of Nanoscience and Engineering, Centre for Nano Manufacturing Inje University Gimhae Republic of Korea
Funder
Science and Engineering Research Board
National Research Foundation of Korea
Publisher
Wiley
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.3001
Reference24 articles.
1. JadormioJ. AfsarM. N.andKoomsonV. J. “Simulation design and integration of 60 GHz Gallium Nitride transceiver into nano‐ferrite circulator on‐silicon CMOS substrate ”2017IEEE 60th International Midwest Symposium on Circuits and Systems.
2. A Practical Design of X‐Band Receiver Front‐End in 65‐nm CMOS
3. ShangY. CaiD. FeiW. YuH.andRenJ. “An 8mW ultra low power 60GHz direct‐conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS ” 2012 IEEE International Symposium on Radio‐Frequency Integration Technology (RFIT) Singapore 2012 pp.47–49.
4. A Highly Linear Dual-Gain CMOS Low-Noise Amplifier for $X$ -Band
5. X- and K-Band SiGe HBT LNAs With 1.2- and 2.2-dB Mean Noise Figures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-06
2. Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology forX‐band applications;International Journal of Circuit Theory and Applications;2022-04-19
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