Bottom‐Gate Approach for All Basic Logic Gates Implementation by a Single‐Type IGZO‐Based MOS Transistor with Reduced Footprint-Reference-Cited by-同舟云学术

Bottom‐Gate Approach for All Basic Logic Gates Implementation by a Single‐Type IGZO‐Based MOS Transistor with Reduced Footprint

Published:2020-03 Issue:6 Volume:7 Page:1901224
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Qi Shaocheng¹²,Cunha Joao²³⁴,Guo Tian‐Long²³,Chen Peiqin²,Proietti Zaccaria Remo²³⁵^ORCID,Dai Mingzhi²

Affiliation:

1. School of Materials Science and EngineeringShanghai University Shanghai 200444 China

2. Ningbo Institute of Materials Technology and EngineeringChinese Academy of Sciences Ningbo 315201 P. R. China

3. Cixi Institute of Biomedical EngineeringNingbo Institute of Materials Technology and EngineeringChinese Academy of Sciences Ningbo 315201 China

4. University of Chinese Academy of Sciences Beijing 100049 China

5. Istituto Italiano di Tecnologia via Morego 30 16163 Genoa Italy

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201901224

Reference60 articles.

1. Making silicon nitride film a viable gate dielectric

2. 2013 Update Overview at International Technology Roadmap for Semiconductors http://www.itrs2.net/ (accessed: October 2019).

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