Dual-gate Ferroelectric Field-effect Transistors: An Emerging Computational Memory for Advanced Logic Operations

Abstract

The emerging data-centric computation and the scalability limits of modern CMOS technology together have imposed strict challenges on modern information-processing paradigms. New types of logic devices with corresponding computing architecture that can process information in fundamentally different ways are being developed to offer extreme energy and time efficiency. In this chapter, we provide a timely account of recent progress in the field of digital Boolean logic in-memory computing, highlighting dual-gate ferroelectric field-effect transistors – a promising computational memory device concept for advanced logic operations.