Tunable Control of Interlayer Excitons in WS 2 /MoS 2 Heterostructures via Strong Coupling with Enhanced Mie Resonances-Reference-Cited by-同舟云学术

Tunable Control of Interlayer Excitons in WS 2 /MoS 2 Heterostructures via Strong Coupling with Enhanced Mie Resonances

Published:2019-04-02 Issue: Volume: Page:1802092
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Yan Jiahao¹^ORCID,Ma Churong¹,Huang Yingcong¹,Yang Guowei¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and TechnologiesNanotechnology Research CenterSchool of Materials Science & EngineeringSun Yat‐sen University Guangdong Guangzhou 510275 P. R. China

Funder

National Basic Research Program of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201802092

Reference46 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

4. Dielectric Screening of Excitons and Trions in Single-Layer MoS2

5. Observation of Excitonic Fine Structure in a 2D Transition-Metal Dichalcogenide Semiconductor

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