Distinct Valley Polarization in Vertical Heterobilayers: Difference between Edge- and Center-Nucleated WS<sub>2</sub>/MoS<sub>2</sub>-Reference-Cited by-同舟云学术

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Distinct Valley Polarization in Vertical Heterobilayers: Difference between Edge- and Center-Nucleated WS₂/MoS₂

Published:2024-07-17 Issue:30 Volume:16 Page:39528-39538
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Le Chinh Tam¹^ORCID,Lee Je-Ho²,Hoang Nguyen The²,Dang Dinh Khoi¹³^ORCID,Kim Jungcheol⁴,Jang Joon I.⁴^ORCID,Seong Maeng-Je²^ORCID,Kim Yong Soo¹^ORCID

Affiliation:

1. Department of Semiconductor Physics & Engineering and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, South Korea

2. Department of Physics and Center for Berry Curvature-Based New Phenomena, Chung-Ang University, Seoul 06974, South Korea

3. Faculty of Chemical and Food Technology, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Viet Nam

4. Department of Physics, Sogang University, Seoul 04107, South Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c03379

Reference68 articles.

1. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Two-Dimensional Valley Electrons and Excitons in Noncentrosymmetric 3R−MoS2

4. Exciton Binding Energy of Monolayer WS2

5. Excited-State Trions in Monolayer WS2

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