Dielectric Screening of Excitons and Trions in Single-Layer MoS2-Reference-Cited by-同舟云学术

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Dielectric Screening of Excitons and Trions in Single-Layer MoS2

Published:2014-09-19 Issue:10 Volume:14 Page:5569-5576
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lin Yuxuan¹,Ling Xi¹,Yu Lili¹,Huang Shengxi¹,Hsu Allen L.¹,Lee Yi-Hsien²,Kong Jing¹,Dresselhaus Mildred S.¹³,Palacios Tomás¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Material Sciences and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan

3. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

Office of Naval Research

U.S. Department of Energy

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl501988y

Reference65 articles.

1. Two-dimensional atomic crystals

2. Liquid Exfoliation of Layered Materials

3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. Large-Area 2-D Electronics: Materials, Technology, and Devices

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2. Measuring the multifunctional properties of MoS2 across the amorphous-crystalline transition using colorimetric sensing;Physical Review B;2024-09-05

3. Strong Electrostatic Control of Excitonic Features in MoS₂ by a Free‐Standing Ultrahigh‐κ Ferroelectric Perovskite;Advanced Functional Materials;2024-08-05

4. Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS₂;The Journal of Physical Chemistry Letters;2024-07-25

5. Evolution of transition metal dichalcogenide film properties during chemical vapor deposition: from monolayer islands to nanowalls;Nanotechnology;2024-07-23

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