High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Published:2018-06-27 Issue:9 Volume:5 Page:1800844
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Wang Tao¹²^ORCID,Wang Xinqiang¹³,Chen Zhaoying¹,Sun Xiaoxiao¹,Wang Ping¹,Zheng Xiantong¹,Rong Xin¹,Yang Liuyun¹,Guo Weiwei¹,Wang Ding¹⁴,Cheng Jianpeng¹,Lin Xi³,Li Peng²,Li Jun²,He Xin²,Zhang Qiang²,Li Mo⁴,Zhang Jian⁴,Yang Xuelin¹,Xu Fujun¹,Ge Weikun¹,Zhang Xixiang²,Shen Bo¹³

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics; School of Physics; Peking University; Beijing 100871 P. R. China

2. King Abdullah University of Science and Technology; Division of Physical Science and Engineering; Thuwal 23955-6900 Kingdom of Saudi Arabia

3. Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China

4. Microsystem & Terahertz Research Center; China Academy of Engineering Physics (CAEP); Chengdu 610200 P. R. China

Funder

National Key R&D Program of China

Science Challenge Project

National Natural Science Foundation of China

NSAF

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/advs.201800844/fullpdf

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